sot223 pnp silicon planar switching transistor issue 4 ? june 1996 j features * 60 volt v ceo * fast switching partmarking detail ? fzt2907 ? fzt2907 FZT2907A ? FZT2907A absolute maximum ratings. parameter symbol fmmt2907 fmmt2907a unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -40 -60 v emitter-base voltage v ebo -5 v continuous collector current i c -600 ma power dissipation at t amb =25c p tot 1.5 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol fzt2907 FZT2907A unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -40 -60 v i c =-10 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -60 -60 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-10 m a, i c =0 collector-emitter cut-off current i cex -50 -50 na v ce =-30v, v be =-0.5v collector cut-off current i cbo -20 -20 -10 -10 na m a v cb =-50v, i e =0 v cb =-50v, i e =0, t amb =150c base cut-off current i b -50 -50 na v ce =-30v, v be =-0.5v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 -0.4 -1.6 v v i c =-150ma, i b =-15ma* i c =-500ma, i b =-50ma* base-emitter saturation voltage v be(sat) -1.3 -2.6 -1.3 -2.6 v v i c =-150ma, i b =-15ma* i c =-500ma, i b =-50ma* static forward current transfer ratio h fe 35 50 75 100 30 300 75 100 100 100 50 300 i c =-0.1ma, v ce =-10v i c =-1ma, v ce =-10v i c =-10ma, v ce =-10v i c =-150ma, v ce =-10v* i c =-500ma, v ce =-10v* transition frequency f t 200 200 mhz i c =-50ma, v ce =-20v f=100mhz *measured under pulsed conditions. pulse width=300ms. duty cycle 2% fzt2907 FZT2907A switching characteristics (at t amb = 25c unless otherwise stated). parameter symbol fmmt2907 fmmt2907a unit conditions. min. max. min. max. output capacitance c obo 88pfv cb =-10v, i e =0, f=100khz input capacitance c ibo 30 30 pf v be =-2v, i c =0 f=100khz turn on time t on 50 50 ns v ce =-30v i c =-150ma, i b1 =-15ma (see turn on circuit) turn off time t off 110 110 ns v ce =-6v, i c =-150ma i b1 = i b2 =-15ma (see turn off circuit) pulse width <200ns -16v -30v 1k w 50 w 200 w scope: rise time < 5 ns turn on time ? test circuit 0 scope: rise time < 5 ns pulse width <200ns 1k w 1k w 37 w -6v 15v 50 w -30v turn off time ? test circuit 0 fzt2907 FZT2907A c c e b 3 - 298 3 - 299
sot223 pnp silicon planar switching transistor issue 4 ? june 1996 j features * 60 volt v ceo * fast switching partmarking detail ? fzt2907 ? fzt2907 FZT2907A ? FZT2907A absolute maximum ratings. parameter symbol fmmt2907 fmmt2907a unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -40 -60 v emitter-base voltage v ebo -5 v continuous collector current i c -600 ma power dissipation at t amb =25c p tot 1.5 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol fzt2907 FZT2907A unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -40 -60 v i c =-10 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -60 -60 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -5 -5 v i e =-10 m a, i c =0 collector-emitter cut-off current i cex -50 -50 na v ce =-30v, v be =-0.5v collector cut-off current i cbo -20 -20 -10 -10 na m a v cb =-50v, i e =0 v cb =-50v, i e =0, t amb =150c base cut-off current i b -50 -50 na v ce =-30v, v be =-0.5v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 -0.4 -1.6 v v i c =-150ma, i b =-15ma* i c =-500ma, i b =-50ma* base-emitter saturation voltage v be(sat) -1.3 -2.6 -1.3 -2.6 v v i c =-150ma, i b =-15ma* i c =-500ma, i b =-50ma* static forward current transfer ratio h fe 35 50 75 100 30 300 75 100 100 100 50 300 i c =-0.1ma, v ce =-10v i c =-1ma, v ce =-10v i c =-10ma, v ce =-10v i c =-150ma, v ce =-10v* i c =-500ma, v ce =-10v* transition frequency f t 200 200 mhz i c =-50ma, v ce =-20v f=100mhz *measured under pulsed conditions. pulse width=300ms. duty cycle 2% fzt2907 FZT2907A switching characteristics (at t amb = 25c unless otherwise stated). parameter symbol fmmt2907 fmmt2907a unit conditions. min. max. min. max. output capacitance c obo 88pfv cb =-10v, i e =0, f=100khz input capacitance c ibo 30 30 pf v be =-2v, i c =0 f=100khz turn on time t on 50 50 ns v ce =-30v i c =-150ma, i b1 =-15ma (see turn on circuit) turn off time t off 110 110 ns v ce =-6v, i c =-150ma i b1 = i b2 =-15ma (see turn off circuit) pulse width <200ns -16v -30v 1k w 50 w 200 w scope: rise time < 5 ns turn on time ? test circuit 0 scope: rise time < 5 ns pulse width <200ns 1k w 1k w 37 w -6v 15v 50 w -30v turn off time ? test circuit 0 fzt2907 FZT2907A c c e b 3 - 298 3 - 299
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